Stochastic simulation of thin photoresist film dissolution: a dynamic and a quasi-static dissolution algorithm for the simulation of surface and line-edge roughness formation
Author:
Publisher
Elsevier BV
Subject
Polymers and Plastics,Materials Chemistry,Organic Chemistry
Reference11 articles.
1. Simulation of surface and line-edge roughness formation in resists
2. Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
3. Photoresist line-edge roughness analysis using scaling concepts
4. Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations
5. Gate line-edge roughness effects in 50-nm bulk MOSFET devices
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