GaN nanostructures by reactive ion etching: Mask and Maskless approach-Reference-Cited by-同舟云学术

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GaN nanostructures by reactive ion etching: Mask and Maskless approach

Published:2019-04 Issue: Volume:18 Page:100284
ISSN:2352-507X
Container-title:Nano-Structures & Nano-Objects
language:en
Short-container-title:Nano-Structures & Nano-Objects

Author:

Lohani Jaya,Varshney Shivani,Rawal Dipendra S.,Sapra Sameer,Tyagi Renu

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Reference37 articles.

1. Direct Imaging of p–n Junction in Core–Shell GaN Wires

2. A III–V nanowire channel on silicon for high-performance vertical transistors

3. Sn-Seeded GaAs Nanowires as Self-Assembled Radial p–n Junctions

4. Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

5. Guided Growth of Epitaxially Coherent GaN Nanowires on SiC

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN nanowires prepared by Cu-assisted photoelectron-chemical etching;Nanoscale Advances;2023

2. Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma;Plasma Sources Science and Technology;2021-09-01

3. Characterisation and antibacterial investigation of a novel coating consisting of mushroom microstructures and HFCVD graphite;Materials & Design;2020-04

4. Vertically aligned nanowires comprising AlGaN/GaN axial heterostructure by convenient maskless reactive ion etching;Materials Research Express;2019-08-07

5. Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications;ACS Applied Nano Materials;2019-05-28

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