Investigation of the performance of 248 nm excimer laser assisted photoresist removal process in gaseous media by response surface methodology and artificial neural network

Author:

Jacob James,Shanmugavelu P.,Balasubramaniam R.

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Management Science and Operations Research,Strategy and Management

Reference24 articles.

1. Photoresist etching using Ar/O2 and He/O2 atmospheric pressure plasma;Jung;Thin Solid Films,2006

2. Oxide surface cleaning by an atmospheric pressure plasma;Yi;Surf Coat Technol,2004

3. The study of atmospheric pressure plasma for surface cleaning;Yi;Surf Coat Technol,2003

4. Mechanism of metallic particle growth and metal-induced pitting on Si wafer surface in wet chemical processing;Morinaga;J Electrochem Soc,1994

5. Behavior of ultrafine metallic particles on silicon wafer surface;Morinaga;J Electrochem Soc,1995

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