Author:
Sensale-Rodriguez Berardi,Guo Jia,Wang Ronghua,Verma Jai,Li Guowang,Fang Tian,Beam Edward,Ketterson Andrew,Schuette Michael,Saunier Paul,Gao Xiang,Guo Shiping,Snider Gregory,Fay Patrick,Jena Debdeep,Xing Huili Grace
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. High-performance E-mode AlGaN/GaN HEMTs;Palacios;IEEE Electron Dev Lett,2006
2. Enhancement-mode InAlN/AlN/GaN HEMTs with 10–12A/mm leakage current and 1012 on/off current ratio;Wang;IEEE Electron Dev Lett,2011
3. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology;Chen;Phys Status Solidi A,2011
4. Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency;Shinohara;IEDM Tech Dig,2011
5. 300-GHz InAlN/GaN HEMTs with InGaN back barrier;Lee;IEEE Electron Dev Lett,2011
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