Detailed analysis of electrical components on a layered wafer via the AC pseudo-MOS method
Author:
Funder
Kansai University
Japan Society for the Promotion of Science
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications;Cristoloveanu;IEEE Trans Electron Devices,2000
2. Sato S, Modeling the propagation of AC signal on the channel of the pseudo-MOS method. In: Joint Int. EUROSOI Workshop and Int. Conf. Ult. Integr. on Silicon (EuroSOI-ULIS), Sep. 2021; pp. 1–4, https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560677.
3. Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET;Sato;Solid-State Electron,2019
4. Detailing influence of contact condition and island edge on dual-configuration Kelvin pseudo-MOSFET Method;Mori;IEEE Trans Electron Devices,2021
5. Pirro L, Ionica I, Ghibaudo G, Cristoloveanu S Split-CV for pseudo-MOSFET characterization: experimental setups and associated parameter extraction methods. In: Int. Conf. Microelectron. Test Struct. (ICMTS), Mar. 2014; 14–19. https://doi.org/10.1109/ICMTS.2014.6841461.
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