Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterojunction bipolar transistor by surface chemical passivation;Sandroff;Appl. Phys. Lett.,1987
2. Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors;Liu;IEEE Trans. Electron Dev.,1992
3. Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors;Lee;IEEE Electron Dev. Lett.,1989
4. A model to explain the effective passivation of the GaAs surface by (NH4)2SX treatment;Nannichi;Jpn. J. Appl. Phys.,1988
5. Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors;Wang;IEEE Electron Dev. Lett.,1992
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