Author:
Kim Dong Young,Seok Ogyun,Park Himchan,Bahng Wook,Kim Hyoung Woo,Park Ki Cheol
Funder
Korea Electrotechnology Research Institute
National Research Council of Science & Technology
Ministry of Science, ICT and Future Planning
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. A dual-metal-trench Schottky Pinch-Rectifier in 4H-SiC;Schoen;IEEE EDL,1998
2. Silicon carbide power devices;Baliga,2005
3. High voltage silicon carbide junction barrier Schottky rectifiers;Zetterling,1997
4. Fabrication of 3.1 kV/10 A 4H-SiC junction barrier Schottky diodes;Wang,2015
5. Demonstration of 1789 V, 6.68 mΩ·cm2 4H-SiC merged-PiN-Schottky diodes;Zhao;EL,2004
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献