Demonstration of 1789 V, 6.68 m [middle dot] cm2 4H-SiC merged-PiN-Schottky diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040254?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier
2. High-power 4H-SiC JBS rectifiers
3. Demonstration of high voltage (600–1300 V), high current (10–140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme;Solid-State Electronics;2018-02
2. 4.3 kV 4H-SiC merged PiN/Schottky diodes;Semiconductor Science and Technology;2006-06-14
3. Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC;Semiconductor Science and Technology;2006-03-30
4. SILICON CARBIDE SCHOTTKY BARRIER DIODE;International Journal of High Speed Electronics and Systems;2005-12
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