Impact of halo implantation on 0.13μm floating body partially depleted SOI n-MOSFETs in low temperature operation

Author:

Pavanello Marcelo Antonio,Martino João Antonio,Simoen Eddy,Claeys Cor

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. On the performance advantage of PD/SOI CMOS with floating bodies;Pelella;IEEE Trans Electron Dev,2002

2. Investigation of intrinsic transistor performance of advanced CMOS devices with 2.5nm NO gate oxides;Kubicek;IEDM Tech Digest,1999

3. 50nm Gate-length CMOS transistor with super-halo: Design, process, and reliability;Yu;IEDM Tech Digest,1999

4. Low temperature electronics: Physics, devices, circuits and applications;Gutierrez,2001

5. Scaling of poly-encapsulated LOCOS for 0.35μm CMOS technology;Kenkare;IEEE Trans Electron Dev,1994

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