Observation of anomalous leakage increase of narrow and short BCPMOS
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
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3. Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices;Wang;IEEE Trans. Electron Dev.,2002
4. A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effect;Kim;IEEE Electron Dev. Lett.,2000
5. Rafferty CS, Vuong H-H, Eshraghi SA, Giles MD, Pinto MR, Hillenius SJ. Explanation of reverse short channel effect by defect gradients. IEDM 1993. p. 311–4
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