Theoretical performance of mid wavelength HgCdTe(1 0 0) heterostructure infrared detectors
Author:
Funder
National Science Centre
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference46 articles.
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3. Numerical estimation of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes;Jóźwikowski;Opt Eng,2011
4. High-operating-temperature infrared photodetectors;Piotrowski,2007
5. The characteristics of minority-carrier exclusion in narrow direct gap semiconductors;White;Infrared Phys,1985
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1. II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023
2. Two types HgCdTe nanorod arrays with ordered symmetrical structure and wide band infrared absorption;Journal of Alloys and Compounds;2019-06
3. Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors;IEEE Transactions on Electron Devices;2018-10
4. Determining the sub-surface damage of CdTe single crystals after lapping;Journal of Materials Science: Materials in Electronics;2018-03-29
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