Theoretical performance of mid wavelength HgCdTe(1 0 0) heterostructure infrared detectors

Author:

Kopytko M.

Funder

National Science Centre

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Infrared detectors;Rogalski,2011

2. Radiative lifetime in semiconductors for infrared detectors;Humpreys;Infrared Phys Technol,1986

3. Numerical estimation of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes;Jóźwikowski;Opt Eng,2011

4. High-operating-temperature infrared photodetectors;Piotrowski,2007

5. The characteristics of minority-carrier exclusion in narrow direct gap semiconductors;White;Infrared Phys,1985

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1. II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

2. Two types HgCdTe nanorod arrays with ordered symmetrical structure and wide band infrared absorption;Journal of Alloys and Compounds;2019-06

3. Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors;IEEE Transactions on Electron Devices;2018-10

4. Determining the sub-surface damage of CdTe single crystals after lapping;Journal of Materials Science: Materials in Electronics;2018-03-29

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