Dose radiation effects in FinFETs

Author:

Wu Xusheng,Chan Philip C.H.,Orozco A.,Vazquez A.,Chaudhry A.,Colinge J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena;Leray;IEEE Trans Nucl Sci,1988

2. Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor;Ferlet-Cavrois;IEEE Trans Electron Dev,1997

3. Effects of total-dose irradiation on gate-all-around (GAA) devices;Colinge;IEEE Trans Nucl Sci,1993

4. Total-dose radiation hardness of the SOI 4-gate transistor (G4-FET);Akarvardar;Electrochem Soc Proc,2005

5. Huang X, Lee WC, Kuo C, Hisamoto D, Chang L, Kedzierski J, et al., Sub 50-nm FinFET: PMOS. Technical digest of IEDM 199:67–70.

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