Author:
Ortiz-Conde Adelmo,García Sánchez Francisco J.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Galup-Montoro C, Schneider MC, Pahim VC, Rios R. Comparison of surface-potential-based and charge-based MOSFET core models. Workshop on compact modeling, Proc Nanotech 2005:13–8.
2. Watts J, McAndrew C, Enz C, Galup-Montoro C, Gildenblat G, Hu C, et al. Advanced compact models for MOSFETs. Workshop on compact modeling. Proc Nanotech 2005:3–11.
3. Galup-Montoro C, Schneider MC, Pahim VC. Fundamentals of next generation compact MOSFET models. Proc 18th Symp Int Circ And Syst Des. Florianolpolis, Brazil;2005:32–7.
4. Evaluation of surface-potential-based bulk-charge compact MOS transistor model;Jie;IEEE Trans Electron Dev,2005
5. Ortiz-Conde A, García Sánchez FJ, Malobabic S, Muci J, Salazar R. Drain Current and Transconductance Model for the Undoped Body Asymmetric Double-Gate MOSFET. Eighth international conference on solid-state and integrated-circuit technology, Shanghai, China. October 2006. p. 1239–42.
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献