Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Author:

Ortiz-Conde Adelmo,García Sánchez Francisco J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Galup-Montoro C, Schneider MC, Pahim VC, Rios R. Comparison of surface-potential-based and charge-based MOSFET core models. Workshop on compact modeling, Proc Nanotech 2005:13–8.

2. Watts J, McAndrew C, Enz C, Galup-Montoro C, Gildenblat G, Hu C, et al. Advanced compact models for MOSFETs. Workshop on compact modeling. Proc Nanotech 2005:3–11.

3. Galup-Montoro C, Schneider MC, Pahim VC. Fundamentals of next generation compact MOSFET models. Proc 18th Symp Int Circ And Syst Des. Florianolpolis, Brazil;2005:32–7.

4. Evaluation of surface-potential-based bulk-charge compact MOS transistor model;Jie;IEEE Trans Electron Dev,2005

5. Ortiz-Conde A, García Sánchez FJ, Malobabic S, Muci J, Salazar R. Drain Current and Transconductance Model for the Undoped Body Asymmetric Double-Gate MOSFET. Eighth international conference on solid-state and integrated-circuit technology, Shanghai, China. October 2006. p. 1239–42.

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