Author:
Su Chung-Wang,Wang Tong-Wen,Wu Meng-Chyi,Ko Cheng-Jung,Huang Jun-Bin
Funder
Chung-Shan Institute of Science and Technology
Ministry of Science and Technology, Taiwan
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. S-band 600 W and X-band 200 W high-power GaN HEMTs for radar transmitters;Miyazawa;SEI Tech Rev,2017
2. An X-band 300-watt class high power GaN HEMT amplifier for radar applications;Kikuchi;SEI Tech Rev,2015
3. 30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs;Chang;IEEE Electron Device Lett,2010
4. Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku-and Ka-band space applications;Suijker,2009
5. Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz;Medjdoub;IEEE Electron Device Lett,2012
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献