Fabrication and characterization of GaN HEMTs grown on SiC substrates with different orientations

Author:

Su Chung-Wang,Wang Tong-Wen,Wu Meng-Chyi,Ko Cheng-Jung,Huang Jun-Bin

Funder

Chung-Shan Institute of Science and Technology

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. S-band 600 W and X-band 200 W high-power GaN HEMTs for radar transmitters;Miyazawa;SEI Tech Rev,2017

2. An X-band 300-watt class high power GaN HEMT amplifier for radar applications;Kikuchi;SEI Tech Rev,2015

3. 30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs;Chang;IEEE Electron Device Lett,2010

4. Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku-and Ka-band space applications;Suijker,2009

5. Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz;Medjdoub;IEEE Electron Device Lett,2012

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