Author:
Sammak Amir,Qi Lin,de Boer Wiebe B.,Nanver Lis K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Germanium-based technologies from materials to devices;Claeys,2007
2. Reznicek A, Rim K, Takagi S, Tillack B. Selective epitaxial growth of Ge-on-Si for photodiode applications. Vol. 16. Honolulu, USA: ECS Trans; p. 837–47; October 2008.
3. Åberg I, Ackland B, Beach JV, Godek C, Johnson R, King CA, et al. A low dark current and high quantum efficiency monolithic Germanium-on-Silicon CMOS imager technology for day and night imaging application. Internationa Electron Devices Meeting (IEDM). San fransisco; 2010. p. 344–47.
4. n and p-doped Germanium grown by MOVPE for solar cell applications;Jakomin,2009
5. Growth of high quality Ge epitaxial layer on Si(100) substrate using ultra thin Si0.5Ge0.5 buffer;Nakatsuru;Mater Res Soc Symp Proc,2006
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献