Determining the generation lifetime in a MOS capacitor using linear sweep techniques
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Thin p/p+ epitaxial layer characterization with pulsed MOS capacitor;Lee;Solid State Electron,1999
2. Silicon epitaxial layer recombination and generation lifetime characterization;Schroder;IEEE Trans. Electron Dev,2003
3. Minority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering;Choe;J. Cryst. Growth,2000
4. The separation of generation lifetimes of Si and SiGe using capacitance-transient measurement on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates;Riley;Solid State Electron,1999
5. Minority carrier lifetime and diffusion length in Si1−x−yGexCy heterolayers;Samanta;Solid State Electron,2003
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