Author:
Landgraf E.,Rösner W.,Städele M.,Dreeskornfeld L.,Hartwich J.,Hofmann F.,Kretz J.,Lutz T.,Luyken R.J.,Schulz T.,Specht M.,Risch L.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Doyle B, Boyanov B, Datta S, Doczy M, Hareland S, Jin B, et al. Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout. 2003 Symposium on VLSI Technology; p. 133–4.
2. Highly performance double gate MOSFET realized with SON process;Harrison;IEDM Tech Dig,2003
3. FinFET scaling to 10nm gate length;Yu;IEDM Tech Dig,2002
4. Bonded planar double-metal-gate transistors NMOS transistors down to 10nm;Vinet;IEEE Electron Dev Lett,2005
5. In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si;Irie;IEDM Tech Dig,2004
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献