Physics-based model of quantum-mechanical wave function penetration into thin dielectric films for evaluating modern MOS capacitors-Reference-Cited by-同舟云学术

Physics-based model of quantum-mechanical wave function penetration into thin dielectric films for evaluating modern MOS capacitors

Published:2005-07 Issue:7 Volume:49 Page:1118-1126
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nakamori Yasuhiko,Moriguchi Kohei,Komiya Kenji,Omura Yasuhisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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5. Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

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