Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367271
Reference12 articles.
1. Direct measurement of the density of states of a two-dimensional electron gas
2. Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers
3. Quantitative understanding of inversion-layer capacitance in Si MOSFET's
4. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
5. Self-Consistent Results forn-Type Si Inversion Layers
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