Experimental and numerical study of H+ irradiated p–i–n diodes for snubberless applications-Reference-Cited by-同舟云学术

Experimental and numerical study of H+ irradiated p–i–n diodes for snubberless applications

Published:2005-02 Issue:2 Volume:49 Page:183-191
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cova P.,Menozzi R.,Portesine M.,Bianconi M.,Gombia E.,Mosca R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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3. Semple DE, Yu S, Chiou H-D. Proton irradiated, high voltage, fast recovery rectifiers fabricated on float-zone silicon. In: Power Conversion, May 1996 Proceedings, 1996. p. 451–5

4. Numerical analysis of local lifetime control for high-speed low-loss P–i–N diode design;Napoli;IEEE Trans. Power Electron.,1999

5. Napoli E, Strollo AGM, Spirito P. Design criteria for PiN diode using multiple He ion implantation for local lifetime control. In: Proceedings of the 8th European Conference on Power Electronics and Applications (EPE’99), 1999

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