Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate-Reference-Cited by-同舟云学术

Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate

Published:2008-03 Issue:3 Volume:52 Page:372-376
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Oh Soon-Young,Ahn Chang-Geun,Yang Jong-Heon,Cho Won-Ju,Lee Woo-Hyun,Koo Hyun-Mo,Lee Seong-Jae

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Victor WC. Chan, Philip CH Chan, Chan M. Three dimensional CMOS integrated circuits on large grain polysilicon films. In: IEEE IEDM tech dig, 2000. p. 161–4.

5. A stacked CMOS technology on SOI substrate;Zhang;IEEE Electron Dev Lett,2004

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