Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy

Published:2007-07 Issue:7 Volume:51 Page:1014-1017
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mandalapu L.J.,Xiu F.X.,Yang Z.,Liu J.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Recent advances in ZnO materials and devices

2. A comprehensive review of ZnO materials and devices

3. Radiation hardness of ZnO at low temperatures

4. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO

5. Hydrogen as a Cause of Doping in Zinc Oxide

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