Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure-Reference-Cited by-同舟云学术

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Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

Published:2010-06 Issue:6 Volume:54 Page:635-641
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ortiz-Conde A.,Latorre Rey A.D.,Liu W.,Chen W.-C.,Lin H.-C.,Liou J.J.,Muci J.,García-Sánchez F.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. A Review of core compact models for undoped double-gate SOI MOSFETs;Ortiz-Conde;IEEE Trans Electron Dev,2007

2. A review on compact modeling of multiple-gate MOSFETs;Song;IEEE Trans Circ Syst I,2009

3. Continuous analytic current–voltage model for surrounding gate MOSFETs;Jiménez;IEEE Electron Dev Lett,2004

4. A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body;Liu;IEEE Trans Electron Dev,2008

5. A compact model of silicon-based nanowire MOSFETs for circuit simulation and design;Yang;IEEE Trans Electron Dev,2008

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier;Solid-State Electronics;2022-02

2. A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs;IEEE Transactions on Electron Devices;2019-07

3. A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction;Microelectronics Reliability;2015-02

4. Threshold voltage extraction in Tunnel FETs;Solid-State Electronics;2014-03

5. Revisiting MOSFET threshold voltage extraction methods;Microelectronics Reliability;2013-01

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