Author:
Ivanov Pavel A.,Levinshtein Michael E.,Palmour John W.,Das Mrinal K.,Hull Brett A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
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2. Sugawara Y, Takayama D, Asano K, Singh R, Palmour J, Hayashi T. 12–19kV 4H–SiC pin diodes with low power loss. In: Proceedings of 2001 international symposium on power semiconductor devices & Ics, Osaka, Japan, p. 27–30.
3. Steady-state and transient characteristics of 10kV 4H–SiC rectifier diodes;Levinshtein;Solid-State Electron,2004
4. Power bipolar devices based on silicon carbide (review);Ivanov;Semiconductors,2005
5. Das MK, Sumakeris JJ,. Hull BA, Richmond J. Evolution of drift-free, high power 4H–SiC pin diodes. In: Proceedings of the ICSCRM-2005, Pittsburgh, PA, in press.
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