Impact of gate to source/drain alignment on the static and RF performance of junctionless Si nanowire n-MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Nanowire transistors without junctions;Colinge;Nature Nanotechnol,2020
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3. Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm;Barraud;IEEE Electron Device Lett,2012
4. Reduced electric field in junctionless transistors;Colinge;Appl Phys Lett,2010
5. Junctionless nanowire transistor (JNT): Properties and design guidelines;Collinge;Solid State Electron,2011
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