The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS-Reference-Cited by-同舟云学术

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The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

Published:2021-01 Issue: Volume:175 Page:107919
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhu Huilong,Bi Dawei,Xie Xin,Hu Zhiyuan,Liu Chunmei,Zhang Zhengxuan,Zou Shichang

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Silicon-on-insulator Technology: Materials to VLSI;Colinge,2004

2. Advantages and limitations of Silicon-on-Insulator technology in radiation environments;Schwank;Microelectron Eng,1997

3. Celler GK, Cristoloveanu S. Frontiers of silicon-on-insulator. J Appl Phys 2003;93(no 9):4955–78.

4. Reliability issues for silicon-on-insulator;Bolam;IEDM Tech Dig,2000

5. Design and characterization of ESD protection devices for high speed I/O in advanced SOI technology;Cao;IEEE Trans Electron Dev,2010

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1. Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs;Micromachines;2023-08-28

2. RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27

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