Influence of metal capping thin film transistor with different Si concentration in ZnSnO
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack;Cho;ACS Appl Mater Interfaces,2021
2. Flexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translation;Oh;Sci Adv,2021
3. Demonstration of Complementary Ternary Graphene Field-Effect Transistors;Kim;Sci Rep,2016
4. The 2016 oxide electronic materials and oxide interfaces roadmap
5. Working Hypothesis to explore novel wide band gap electrically Conducting amorphous oxides and examples;Hosono;J Non Cryst Solids,1996
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