Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects;Müller;ECS J. Solid State Sci. Technol.,2015
2. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories;Yurchuk;IEEE Trans. Electron Devices,2016
3. Intrinsic electron traps in atomic-layer deposited HfO2 insulators;Cerbu;Appl. Phys. Lett.,2016
4. Spectroscopy of Deep Gap States in High-k Insulators;V. V. Afanas’ev,;ECS Trans.,2014
5. Intrinsic charge trapping in amorphous oxide films: status and challenges;Strand;J. Phys.: Condens. Matter,2018
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