Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Author:

Zaka A.,Singer J.,Dornel E.,Garetto D.,Rideau D.,Rafhay Q.,Clerc R.,Manceau J.-P.,Degors N.,Boccaccio C.,Tavernier C.,Jaouen H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Kondo M, Nakauchi T, Aoki N, Nakamura M, Naruke K, Ishiuchi H. Simulation of semiconductor processes and devices. In: 2006 International conference on, IEEE; 2006. p. 127–30.

5. Edge Profile Effect of Tunnel Oxide on Erase Threshold-Voltage Distributions in Flash Memory Cells

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Semi-analytic Modeling for Hot Carriers in Electron Devices;Hot Carrier Degradation in Semiconductor Devices;2014-10-04

2. Efficient Methodologies for 3-D TCAD Modeling of Emerging Devices and Circuits;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2013-01

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