Author:
Zaka A.,Singer J.,Dornel E.,Garetto D.,Rideau D.,Rafhay Q.,Clerc R.,Manceau J.-P.,Degors N.,Boccaccio C.,Tavernier C.,Jaouen H.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Flash memories;Cappelletti,1999
2. Hot-electron injection into the oxide in n-channel MOS devices
3. Yamada S, Hiura Y, Yamane T, Amemiya K, Ohshima Y, Yoshikawa K. In: Electron devices meeting. IEDM ’93 technical digest, international; 1993. p. 23–6.
4. Kondo M, Nakauchi T, Aoki N, Nakamura M, Naruke K, Ishiuchi H. Simulation of semiconductor processes and devices. In: 2006 International conference on, IEEE; 2006. p. 127–30.
5. Edge Profile Effect of Tunnel Oxide on Erase Threshold-Voltage Distributions in Flash Memory Cells
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