A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET-Reference-Cited by-同舟云学术

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A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

Published:2023-01 Issue: Volume:199 Page:108492
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fernandez Julian G.^ORCID,Seoane Natalia,Comesaña Enrique,Garcia-Loureiro Antonio

Funder

Ministerio de Ciencia e Innovación

European Regional Development Fund

MICINN

Xunta de Galicia

Federación Española de Enfermedades Raras

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs

2. Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

3. Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects

4. Matching properties of MOS transistors

5. Process Variation and Pelgrom's Law [Circuit Intuitions]

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Artificial Neuron: Built From Nanosheet Transistors to Achieve Ultra Low Power Consumption;IEEE Access;2024

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