Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation-Reference-Cited by-同舟云学术

Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation

Published:2011-11 Issue: Volume:65-66 Page:177-183
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Suhane A.,Cacciato A.,Richard O.,Arreghini A.,Adelmann C.,Swerts J.,Rothschild O.,Van den bosch G.,Breuil L.,Bender H.,Jurczak M.,Debusschere I.,Kittl J.A.,De Meyer K.,Van Houdt J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories;Suhane;IEEE Electron Device Lett,2010

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