Author:
Vestling Lars,Bengtsson Olof,Eklund Klas-Håkan,Olsson Jörgen
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI;Scholvin;IEEE Trans Electron Dev,2006
2. Substrate crosstalk reduction using SOI technology;Raskin;IEEE Trans Electron Dev,1997
3. High-frequency performance of submicrometer channel-length silicon MOSFET’s;Raynaud;IEEE Electron Dev Lett,1991
4. Gianesello F, Gloria D, Raynaud C, Montusclat S, Boret S, Touret P. Integrated inductors in HR SOI CMOS technologies: on the economic advantage of SOI technologies for the integration of RF applications. In: Proc IEEE SOI Conf; 2007. p. 119–20.
5. Ankarcrona J, Larsen M, Vestling L, Eklund KH, Olsson J. Low resistivity SOI for improved efficiency of LDMOS. In: Proc EuroSOI2006; 2006. p. 69–70.
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