Fabrication and Characterization of 150-mm Silicon-on-Polycrystalline Silicon Carbide Substrates-Reference-Cited by-同舟云学术

Fabrication and Characterization of 150-mm Silicon-on-Polycrystalline Silicon Carbide Substrates

Published:2011-12-07 Issue:3 Volume:41 Page:480-487
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Lotfi S.,Li L.-G.,Vallin Ö.,Norström H.,Olsson J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-011-1827-2.pdf

Reference16 articles.

1. J. Olsson, Microelectron. Eng. 56, 339 (2001).

2. J.-P. Colinge, Silicon-on-Insulator Technology, 3rd ed. (New York: Springer Science + Business Media, 2004), pp. 215–216.

3. B. Edholm, L. Vestling, M. Bergh, S. Tiensuu, and A. Soderbarg, Proceedings of the IEEE International SOI Conference (1997), pp. 30–31.

4. J.P. Mazellier, J. Widiez, F. Andrieu, M. Lions, S. Saada, M. Hasegawa, K. Tsugawa, L. Brevard, J. Dechamp, M. Rabarot, V. Delaye, S. Cristoloveanu, L. Clavelier, S. Deleonibus, P. Bergonzo, and O. Faynot, Proceedings of the IEEE International SOI Conference (2009), pp. 1–2.

5. D. M. Martin, Proceedings of EUROSOI Conference (2007), p. 67.

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