Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562GHz;Yamashita;IEEE Electron Device Lett,2002
2. Pseudomorphic InP HEMTs with dry-etched source visas having 190mW output power and 40% PAE at V-band;Grundbacher;IEEE Electron Device Lett,1999
3. Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiency;Tang;IEEE Solid-State Circuits,2000
4. Very high efficiency V-band power InP HEMT MMICs;Kong;IEEE Electron Device Lett,2000
5. A 80-gbit/s D-type flip-flop circuit using InP HEMT technology;Suzuki;IEEE J Solid-State Circuits,2004
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1. Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches;Semiconductors;2019-03
2. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19
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