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A new simplified analytical short-channel threshold voltage model for InAlAs/InGaAs heterostructure InP based pulsed doped HEMT

  • Published:2004-03 Issue:3 Volume:48 Page:437-443
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Gupta Ritesh,Gupta Mridula,Gupta R.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor;Japanese Journal of Applied Physics;2024-02-05

2. A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications;AEU - International Journal of Electronics and Communications;2019-05

3. Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-01-23

4. Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation;Superlattices and Microstructures;2010-06

5. Carbonyl Reductase;Encyclopedia of Industrial Biotechnology;2010-04-15
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