New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization-Reference-Cited by-同舟云学术

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New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Published:2011-11 Issue: Volume:65-66 Page:51-56
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Carrère J.P.,Oddou J.P.,Place S.,Richard C.,Benoit D.,Jenny C.,Gatefait M.,Aumont C.,Tournier A.,Roy F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Radiation-induced dark current in CMOS active pixel sensors;Cohen;IEEE Trans Nucl Sci,2000

2. Degradation behavior and damage mechanisms of CCD image sensor with deep-UV laser radiation;Li;IEEE Trans Electron Dev,2004

3. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology;Goiffon;IEEE Trans Electron Dev A,2009

4. Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor;Tokashiki;Thin Solid Films,2007

5. Cohen M et al. Fully optimized Cu based process with dedicated cavity etch for 1.75Îμm and 1.45Îμm pixel pitch CMOS image sensors. In: IEEE international electron devices meeting (IEDM) dig tech papers, San Fransico; 2006.

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