Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

Author:

Rafı́ J.M.,Mercha A.,Simoen E.,Claeys C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Electrical characterization of silicon-on-insulator materials and devices;Cristoloveanu,1995

2. The effect of a floating substrate on the operation of silicon-on-sapphire transistors;Eaton;IEEE Trans. Electron Dev.,1978

3. Transient drain current and propagation delay in SOI CMOS;Lim;IEEE Trans. Electron Dev.,1984

4. Generation lifetime, interface state density, active defect density and oxide resistivity measurements for SOI-MOSFETs and their radiation dependence;Kimpton;IEEE Trans. Nucl. Sci.,1992

5. Characterization of carrier generation in enhancement-mode SOI MOSFET's;Ioannou;IEEE Electron Dev. Lett.,1990

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