Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study-Reference-Cited by-同舟云学术

Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study

Published:2007-04 Issue:4 Volume:51 Page:611-616
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Samsudin K.,Adamu-Lema F.,Brown A.R.,Roy S.,Asenov A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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4. Doris B, Ieong M, Kanarsky Y, Zhang Y, Roy RA. Extreme scaling with ultra-thin Si channel MOSFETs. International electron devices meeting (IEDM) technical digest; 2002. p. 267–70.

5. Extremely scaled silicon nano-CMOS devices;Chang;Proc IEEE,2003

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