Author:
Wu W.,Li X.,Gildenblat G.,Workman G.O.,Veeraraghavan S.,McAndrew C.C.,van Langevelde R.,Smit G.D.J.,Scholten A.J.,Klaassen D.B.M.,Watts J.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference55 articles.
1. Silicon-on-insulator technology: materials to VLSI;Colinge,2004
2. Shahidi GG. SOI technology for the GHz era. In: International symposium on VLSI technology, systems, and applications, proceedings of technical papers, 2001. p. 11–4.
3. Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors;Cai;J Appl Phys,2001
4. Operation and modeling of the MOS transistor;Tsividis,1999
5. An explicit physical model for the long-channel MOS transistor including small-signal parameters;Araujo Cunha;Solid State Electron,1995
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献