Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC-Reference-Cited by-同舟云学术

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Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC

Published:2005-12 Issue:12 Volume:49 Page:1937-1941
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang Shu-Cheng,Wang Shui-Jinn,Uang Kai-Ming,Liou Bor-Wen

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Comparison of 6H–SiC, 3C–SiC, and Si for power devices;Bhatnagar;IEEE Trans Electron Dev,1993

2. SiC devices: physics and numerical simulation;Ruff;IEEE Trans Electron Dev,1994

3. Comparison of SiC, GaAs, and Si RF MESFET power densities;Weitzel;IEEE Electron Dev Lett,1995

4. Silicon carbide high-power devices;Weitzel;IEEE Trans Electron Dev,1996

5. A new 4H–SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics;Singh;IEEE Trans Electron Dev,2001

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC;Electronics;2024-01-03

2. Effect of TiO2 Thin Film with Different Dopants in Bringing Au-Metal into a Contact with n-Si;Journal of Inorganic and Organometallic Polymers and Materials;2022-01-21

3. 500℃ high-temperature reliability of Ni/Nb Ohmic contact on n-type 4H-SiC;Japanese Journal of Applied Physics;2021-12-15

4. Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode;Journal of Electronic Materials;2021-10-18

5. Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC;Semiconductors;2019-12

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