Effect of TiO2 Thin Film with Different Dopants in Bringing Au-Metal into a Contact with n-Si-Reference-Cited by-同舟云学术

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Effect of TiO2 Thin Film with Different Dopants in Bringing Au-Metal into a Contact with n-Si

Published:2022-01-21 Issue:3 Volume:32 Page:1067-1077
ISSN:1574-1443
Container-title:Journal of Inorganic and Organometallic Polymers and Materials
language:en
Short-container-title:J Inorg Organomet Polym

Author:

Yıldız D. E.,Gullu H. H.^ORCID,Cavus H. Kanbur

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Polymers and Plastics

Link

https://link.springer.com/content/pdf/10.1007/s10904-021-02201-z.pdf

Reference62 articles.

1. S.M. Sze, K.K. Ng, Physics of semiconductor devices (Wiley, Hoboken, 2007)

2. B.L. Sharma, Metal-Semiconductor Schottky barrier junctions and their applications (Plenum Press, New York, 1984)

3. E.H. Rhoderick, R.H. Williams, Metal semiconductor contacts (Cleredon, Oxford, 1988)

4. S. Altindal, O. Sevgili, Y. Azizian-Kalandaragh, J. Mater. Sci.: Mater. Electron. 30, 9273 (2019)

5. K. Omri, A. Bettaibi, K. Khirouni, L. El Mir, Physica B 537, 167 (2018)

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