Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Advanced semiconductor device physics and modeling;Liou,1994
2. Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs;Lee;IEEE Trans Electron Dev,2002
3. Tunneling into interface states as reliability monitor for ultrathin oxides;Ghetti;IEEE Trans Electron Dev,2000
4. Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime;Driussi;IEEE Trans Electron Dev,2002
5. Lu Q, Takeuchi H, Lin R, King T-J, Hu C, Onishi K. et al. Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate. In: Proc international reliability physics symposium, 2002. p. 429–30.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献