Direct determination of threshold condition in DG-MOSFETs from the g/I curve

Author:

Cunha Ana Isabela Araújo,Pavanello Marcelo Antonio,Trevisoli Renan Doria,Galup-Montoro Carlos,Schneider Marcio Cherem

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Monte Carlo simulation of a 30-nm dual-gate MOSFET: how far can silicon go?;Frank;IEDM Tech Dig,1992

2. Multiple gate devices: advantages and challenges;Poiroux;Microelectron Eng,2005

3. Understanding threshold voltage in undoped-body MOSFETs: an appraisal of various criteria;García Sánchez;Microelectron Reliab,2006

4. A physical charge-controlled model for MOS transistors;Maher,1987

5. Derivation of the unified charge control model and parameter extraction procedure;Cunha;Solid-State Electron,1999

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