Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors-Reference-Cited by-同舟云学术

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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors

Published:2013-08 Issue: Volume:86 Page:41-44
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Huang Xiaoming,Wu Chenfei,Lu Hai,Ren Fangfang,Chen Dunjun,Jiang Rong,Zhang Rong,Zheng Youdou,Xu Qingyu

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

4. Electronic structure and transport properties in the transparent amorphous oxide semiconductor2CdO⋅GeO2

5. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

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1. Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system;Journal of Vacuum Science & Technology A;2023-07-11

2. High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling;IEEE Transactions on Electron Devices;2021-01

3. Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric;Journal of Vacuum Science & Technology B;2021-01

4. Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure;Scientific Reports;2018-04-04

5. Solution-processed Tetrafluoroborate-capped In2 O3 Nanocrystal Thin-Film Transistors;Bulletin of the Korean Chemical Society;2018-03-01

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