Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes-Reference-Cited by-同舟云学术

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Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes

Published:2015-02 Issue: Volume:104 Page:20-24
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Soo Hyun,Kim Dong Churl,Kim Jongbae,Jeon Soo-Kun,Yu Jae Su

Funder

Ministry of Trade, Industry & Energy of the Republic of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications

2. High Power LEDs - Technology Status and Market Applications

3. Comparison of Three Receiver Designs for Optical Wireless Communications using White LEDs

4. High-power light-emitting diode based facility for plant cultivation

5. White light emitting diodes with super-high luminous efficacy

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1. Effect of etching time onto structural, morphological, and optical characteristics of quaternary AlInGaN films on Si substrate;Materials Science and Engineering: B;2021-01

2. Porous Formation in p-Type Gallium Nitride Films via 50 Hz Operated Alternating Current-Assisted Photo-Electrochemical Etching in Methanol-Sulfuric Acid Solution;Journal of The Electrochemical Society;2018

3. Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes;Journal of the Korean Physical Society;2017-09

4. High reliable and chromaticity-tunable flip-chip w-LEDs with Ce:YAG glass-ceramics phosphor for long-lifetime automotive headlights applications;Optical Materials;2017-07

5. Temperature-dependent optical, spectral, and thermal characteristics of InGaN/GaN near-ultraviolet light-emitting diodes;physica status solidi (a);2015-11-16

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