Temperature-dependent optical, spectral, and thermal characteristics of InGaN/GaN near-ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

Temperature-dependent optical, spectral, and thermal characteristics of InGaN/GaN near-ultraviolet light-emitting diodes

Published:2015-11-16 Issue:1 Volume:213 Page:46-51
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lee Soo Hyun¹,Guan Xiang-Yu¹,Jeon Soo-Kun²,Yu Jae Su¹

Affiliation:

1. Department of Electronics and Radio Engineering; Kyung Hee University; 1732 Deogyeong-daero Giheung-gu, Yongin-si Gyeonggi-do 446-701 Republic of Korea

2. Semicon Light Co., Ltd.; 49 Wongomae-ro 2beon-gil Giheung-gu, Yongin-si Gyeonggi-do 446-901 Republic of Korea

Funder

Korea Small and Medium Business Administration

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications

2. High-power light-emitting diode based facility for plant cultivation

3. Illumination with solid state lighting technology

4. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

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