Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior-Reference-Cited by-同舟云学术

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Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior

Published:2018-02 Issue: Volume:140 Page:18-22
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Baek Sangwon,Lee Junyoung,Park Iksoo,Baek Rock-Hyun,Lee Jeong-Soo

Funder

Ministry of Trade, Industry & Energy (MOTIE)

Korea Semiconductor Research Consortium (KSRC)

Nano-Convergence Foundation

Ministry of Science, ICT and Future Planning (MSIP, Korea)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs;Lelis;IEEE Trans Electron Devices,2015

2. Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping;Yen;Appl Phys Lett,2016

3. A comprehensive model for PMOS NBTI degradation: recent progress;Alam;Microelectron Reliab,2007

4. The paradigm shift in understanding the bias temperature instability: from reaction-diffusion to switching oxide traps;Grasser;IEEE Trans Electron Devices,2011

5. Two-way tunneling model of oxide trap charging and discharging in SiC MOSFETs;Lelis;Mater Sci Forum,2012

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