Affiliation:
1. U.S. Army Research Laboratory
2. University of Maryland
Abstract
A two-way tunneling model describing simultaneous oxide trap charging and discharging in SiC MOSFETs is presented, along with a comparison with experimental results. This model can successfully account for the variation in threshold-voltage instability observed as a function of bias-stress time, bias-stress magnitude, and measurement time.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
45 articles.
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