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Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors

  • Published:2006-04 Issue:4 Volume:50 Page:637-643
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Chaisantikulwat W.,Mouis M.,Ghibaudo G.,Gallon C.,Fenouillet-Beranger C.,Maude D.K.,Skotnicki T.,Cristoloveanu S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. On the mobility versus drain current relation for a nanoscale MOSFET;Lundstrom;IEEE Electron Dev Lett,2001

2. Nonstationary electron/hole transport in sub-0.1μm MOS devices: correlation with mobility and low-power CMOS application;Ohba;IEEE Trans Electron Dev,2001

3. Investigation of the MOST channel conductance in weak inversion;Koomen;Solid-State Electron,1973

4. New method for the extraction of MOSFET parameters;Ghibaudo;Electron Lett,1988

5. New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices;Gallon;Proc Int SOI Conf,2004

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