Author:
Pavanello M.A.,Martino J.A.,Simoen E.,Rooyackers R.,Collaert N.,Claeys C.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Multiple-Gate SOI MOSFETs: device design guidelines;Park;IEEE Trans Electron Dev,2002
2. 30nm self-aligned FinFET with large source/drain fan-out structure;Woo;Electron Lett,2003
3. Bulk inversion in FinFETs and implied insights on effective gate width;Kim;IEEE Trans Electron Dev,2005
4. Kilchytska V, Collaert N, Rooyackers R, Lederer D, Raskin J-P, Flandre D. Perspective of FinFETs for analog applications. In: Proceedings of ESSDERC 2004. p. 65–8.
5. FinFET analogue characterization from DC to 110GHz;Lederer;Solid-State Electron,2005
Cited by
28 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献